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2N5771_D75Z Datasheet

2N5771_D75Z Datasheet
Total Pages: 10
Size: 708.18 KB
ON Semiconductor
This datasheet covers 5 part numbers: 2N5771_D75Z, 2N5771_D74Z, 2N5771_D27Z, 2N5771_D26Z, 2N5771
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2N5771_D75Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

200mA

Voltage - Collector Emitter Breakdown (Max)

15V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 300mV

Power - Max

350mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5771_D74Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

200mA

Voltage - Collector Emitter Breakdown (Max)

15V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 300mV

Power - Max

350mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5771_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

200mA

Voltage - Collector Emitter Breakdown (Max)

15V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 300mV

Power - Max

350mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5771_D26Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

200mA

Voltage - Collector Emitter Breakdown (Max)

15V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 300mV

Power - Max

350mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5771

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

200mA

Voltage - Collector Emitter Breakdown (Max)

15V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 300mV

Power - Max

350mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3