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2N6667 Datasheet

2N6667 Datasheet
Total Pages: 6
Size: 113.75 KB
ON Semiconductor
This datasheet covers 2 part numbers: 2N6667, 2N6667G
2N6667 Datasheet Page 1
2N6667 Datasheet Page 2
2N6667 Datasheet Page 3
2N6667 Datasheet Page 4
2N6667 Datasheet Page 5
2N6667 Datasheet Page 6
2N6667

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Darlington

Current - Collector (Ic) (Max)

10A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

3V @ 100mA, 10A

Current - Collector Cutoff (Max)

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 5A, 3V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

2N6667G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Darlington

Current - Collector (Ic) (Max)

10A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

3V @ 100mA, 10A

Current - Collector Cutoff (Max)

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 5A, 3V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB