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2N7002ET1G Datasheet

2N7002ET1G Datasheet
Total Pages: 6
Size: 199.65 KB
ON Semiconductor
This datasheet covers 1 part numbers: 2N7002ET1G
2N7002ET1G Datasheet Page 1
2N7002ET1G Datasheet Page 2
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2N7002ET1G Datasheet Page 6
2N7002ET1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

260mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 240mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.81nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

26.7pF @ 25V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3