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2SA1382 Datasheet

2SA1382 Datasheet
Total Pages: 5
Size: 189.25 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: 2SA1382,T6MIBF(J
2SA1382 Datasheet Page 1
2SA1382 Datasheet Page 2
2SA1382 Datasheet Page 3
2SA1382 Datasheet Page 4
2SA1382 Datasheet Page 5
2SA1382,T6MIBF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 33mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

150 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

110MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD