2SA1930 Datasheet
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
