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2SA2012-TD-E Datasheet

2SA2012-TD-E Datasheet
Total Pages: 5
Size: 286.18 KB
ON Semiconductor
This datasheet covers 1 part numbers: 2SA2012-TD-E
2SA2012-TD-E Datasheet Page 1
2SA2012-TD-E Datasheet Page 2
2SA2012-TD-E Datasheet Page 3
2SA2012-TD-E Datasheet Page 4
2SA2012-TD-E Datasheet Page 5
2SA2012-TD-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

210mV @ 30mA, 1.5A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 500mA, 2V

Power - Max

3.5W

Frequency - Transition

420MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

PCP