2SB1188T100P Datasheet
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Manufacturer Rohm Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 32V Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 500mA, 3V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package MPT3 |
Manufacturer Rohm Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 32V Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 3V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package MPT3 |
Manufacturer Rohm Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 32V Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 3V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package MPT3 |
