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2SC2655-Y Datasheet

2SC2655-Y Datasheet Page 1
2SC2655-Y Datasheet Page 2
2SC2655-Y Datasheet Page 3
2SC2655-Y Datasheet Page 4
2SC2655-Y Datasheet Page 5
2SC2655-Y,WNLF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y,T6WNLF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y,T6SWFF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y,T6KEHF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y,T6F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y,T6APNF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y,F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y(TE6,F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y(T6TOJ,FM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y(T6STL,FM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y(T6OMI,FM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2655-Y(T6ND3,AF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD