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2SC3668-Y Datasheet

2SC3668-Y Datasheet
Total Pages: 5
Size: 166.74 KB
Toshiba Semiconductor and Storage
2SC3668-Y Datasheet Page 1
2SC3668-Y Datasheet Page 2
2SC3668-Y Datasheet Page 3
2SC3668-Y Datasheet Page 4
2SC3668-Y Datasheet Page 5
2SC3668-Y,T2WNLF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM

2SC3668-Y,T2F(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM

2SC3668-Y,T2F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM

2SC3668-Y,F2PANF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM

2SC3668-O,T2CLAF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM