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2SC5171 Datasheet

2SC5171 Datasheet
Total Pages: 4
Size: 142.26 KB
Toshiba Semiconductor and Storage
2SC5171 Datasheet Page 1
2SC5171 Datasheet Page 2
2SC5171 Datasheet Page 3
2SC5171 Datasheet Page 4
2SC5171,Q(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

180V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC5171,ONKQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

180V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC5171,MATUDQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

180V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC5171(ONK,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

180V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC5171(LBS2MATQ,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

180V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS