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2SC5201 Datasheet

2SC5201 Datasheet
Total Pages: 5
Size: 163.2 KB
Toshiba Semiconductor and Storage
2SC5201 Datasheet Page 1
2SC5201 Datasheet Page 2
2SC5201 Datasheet Page 3
2SC5201 Datasheet Page 4
2SC5201 Datasheet Page 5
2SC5201,T6MURAF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

600V

Vce Saturation (Max) @ Ib, Ic

1V @ 500mA, 20mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 20mA, 5V

Power - Max

900mW

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC5201,T6F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

600V

Vce Saturation (Max) @ Ib, Ic

1V @ 500mA, 20mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 20mA, 5V

Power - Max

900mW

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC5201,F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

600V

Vce Saturation (Max) @ Ib, Ic

1V @ 500mA, 20mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 20mA, 5V

Power - Max

900mW

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC5201(TE6,F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

600V

Vce Saturation (Max) @ Ib, Ic

1V @ 500mA, 20mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 20mA, 5V

Power - Max

900mW

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC5201(T6MURATAFM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

600V

Vce Saturation (Max) @ Ib, Ic

1V @ 500mA, 20mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 20mA, 5V

Power - Max

900mW

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD