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2SC5566-TD-E Datasheet

2SC5566-TD-E Datasheet
Total Pages: 8
Size: 358.31 KB
ON Semiconductor
This datasheet covers 2 part numbers: 2SC5566-TD-E, 2SA2013-TD-E
2SC5566-TD-E Datasheet Page 1
2SC5566-TD-E Datasheet Page 2
2SC5566-TD-E Datasheet Page 3
2SC5566-TD-E Datasheet Page 4
2SC5566-TD-E Datasheet Page 5
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2SC5566-TD-E Datasheet Page 8
2SC5566-TD-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

4A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

225mV @ 100mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 500mA, 2V

Power - Max

1.3W

Frequency - Transition

400MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

PCP

2SA2013-TD-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

4A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

340mV @ 100mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 500mA, 2V

Power - Max

3.5W

Frequency - Transition

400MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

PCP