Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SJ687-ZK-E1-AY Datasheet

2SJ687-ZK-E1-AY Datasheet
Total Pages: 10
Size: 270.54 KB
Renesas Electronics America
This datasheet covers 1 part numbers: 2SJ687-ZK-E1-AY
2SJ687-ZK-E1-AY Datasheet Page 1
2SJ687-ZK-E1-AY Datasheet Page 2
2SJ687-ZK-E1-AY Datasheet Page 3
2SJ687-ZK-E1-AY Datasheet Page 4
2SJ687-ZK-E1-AY Datasheet Page 5
2SJ687-ZK-E1-AY Datasheet Page 6
2SJ687-ZK-E1-AY Datasheet Page 7
2SJ687-ZK-E1-AY Datasheet Page 8
2SJ687-ZK-E1-AY Datasheet Page 9
2SJ687-ZK-E1-AY Datasheet Page 10
2SJ687-ZK-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

7mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

57nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 36W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (MP-3ZK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63