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2SK2103T100 Datasheet

2SK2103T100 Datasheet
Total Pages: 5
Size: 137.49 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: 2SK2103T100
2SK2103T100 Datasheet Page 1
2SK2103T100 Datasheet Page 2
2SK2103T100 Datasheet Page 3
2SK2103T100 Datasheet Page 4
2SK2103T100 Datasheet Page 5
2SK2103T100

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

400mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MPT3

Package / Case

TO-243AA