2SK2883(TE24L Datasheet
2SK2883(TE24L Datasheet
Total Pages: 6
Size: 447.5 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
2SK2883(TE24L,Q)
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-220SM Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
