Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK2995(F) Datasheet

2SK2995(F) Datasheet
Total Pages: 6
Size: 415.5 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: 2SK2995(F)
2SK2995(F) Datasheet Page 1
2SK2995(F) Datasheet Page 2
2SK2995(F) Datasheet Page 3
2SK2995(F) Datasheet Page 4
2SK2995(F) Datasheet Page 5
2SK2995(F) Datasheet Page 6
2SK2995(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

68mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

132nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5400pF @ 10V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)IS

Package / Case

TO-3P-3, SC-65-3