Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3065T100 Datasheet

2SK3065T100 Datasheet
Total Pages: 4
Size: 85.22 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: 2SK3065T100
2SK3065T100 Datasheet Page 1
2SK3065T100 Datasheet Page 2
2SK3065T100 Datasheet Page 3
2SK3065T100 Datasheet Page 4
2SK3065T100

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

320mOhm @ 1A, 4V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

160pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MPT3

Package / Case

TO-243AA