2SK3318 Datasheet
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Manufacturer Panasonic Electronic Components Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 460mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 20V FET Feature - Power Dissipation (Max) 3W (Ta), 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TOP-3F-A1 Package / Case TOP-3F |
