2SK3408-T1B-AT Datasheet
2SK3408-T1B-AT Datasheet
Total Pages: 9
Size: 189.33 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
2SK3408-T1B-AT
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 43V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 195mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package SC-96-3, Thin Mini Mold Package / Case SC-96 |
