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2SK3431-Z-E1-AZ Datasheet

2SK3431-Z-E1-AZ Datasheet
Total Pages: 10
Size: 209.05 KB
Renesas Electronics America
This datasheet covers 2 part numbers: 2SK3431-Z-E1-AZ, 2SK3431-AZ
2SK3431-Z-E1-AZ Datasheet Page 1
2SK3431-Z-E1-AZ Datasheet Page 2
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2SK3431-Z-E1-AZ Datasheet Page 10
2SK3431-Z-E1-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

83A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6100pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

2SK3431-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

83A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6100pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3