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2SK4065-DL-1EX Datasheet

2SK4065-DL-1EX Datasheet
Total Pages: 7
Size: 295.72 KB
ON Semiconductor
This datasheet covers 2 part numbers: 2SK4065-DL-1EX, 2SK4065-DL-1E
2SK4065-DL-1EX Datasheet Page 1
2SK4065-DL-1EX Datasheet Page 2
2SK4065-DL-1EX Datasheet Page 3
2SK4065-DL-1EX Datasheet Page 4
2SK4065-DL-1EX Datasheet Page 5
2SK4065-DL-1EX Datasheet Page 6
2SK4065-DL-1EX Datasheet Page 7
2SK4065-DL-1EX

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.65W (Ta), 90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

2SK4065-DL-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.65W (Ta), 90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB