2SK4196LS-1E Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.56Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 30V FET Feature - Power Dissipation (Max) 2W (Ta), 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F-3FS Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.56Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 30V FET Feature - Power Dissipation (Max) 2W (Ta), 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FI(LS) Package / Case TO-220-3 Full Pack |
