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5LP01M-TL-E Datasheet

5LP01M-TL-E Datasheet
Total Pages: 6
Size: 259.08 KB
ON Semiconductor
This datasheet covers 2 part numbers: 5LP01M-TL-E, 5LP01M-TL-H
5LP01M-TL-E Datasheet Page 1
5LP01M-TL-E Datasheet Page 2
5LP01M-TL-E Datasheet Page 3
5LP01M-TL-E Datasheet Page 4
5LP01M-TL-E Datasheet Page 5
5LP01M-TL-E Datasheet Page 6
5LP01M-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

70mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

23Ohm @ 40mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.4pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCP

Package / Case

SC-70, SOT-323

5LP01M-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

70mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

23Ohm @ 40mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.4pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCP

Package / Case

SC-70, SOT-323