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ALD114835PCL Datasheet

ALD114835PCL Datasheet
Total Pages: 12
Size: 106.42 KB
Advanced Linear Devices Inc.
This datasheet covers 4 part numbers: ALD114835PCL, ALD114935PAL, ALD114935SAL, ALD114835SCL
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ALD114835PCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

4 N-Channel, Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

540Ohm @ 0V

Vgs(th) (Max) @ Id

3.45V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

16-DIP (0.300", 7.62mm)

Supplier Device Package

16-PDIP

ALD114935PAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

540Ohm @ 0V

Vgs(th) (Max) @ Id

3.45V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP

ALD114935SAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

540Ohm @ 0V

Vgs(th) (Max) @ Id

3.45V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

ALD114835SCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

4 N-Channel, Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

540Ohm @ 0V

Vgs(th) (Max) @ Id

3.45V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC