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ALD212900ASAL Datasheet

ALD212900ASAL Datasheet
Total Pages: 12
Size: 515.01 KB
Advanced Linear Devices Inc.
This datasheet covers 4 part numbers: ALD212900ASAL, ALD212900SAL, ALD212900APAL, ALD212900PAL
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ALD212900ASAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

14Ohm

Vgs(th) (Max) @ Id

10mV @ 20µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

ALD212900SAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

14Ohm

Vgs(th) (Max) @ Id

20mV @ 20µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

ALD212900APAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

14Ohm

Vgs(th) (Max) @ Id

10mV @ 20µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP

ALD212900PAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

14Ohm

Vgs(th) (Max) @ Id

20mV @ 20µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP