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AON6411_001 Datasheet

AON6411_001 Datasheet
Total Pages: 6
Size: 262.2 KB
Alpha & Omega Semiconductor
This datasheet covers 2 part numbers: AON6411_001, AON6411
AON6411_001 Datasheet Page 1
AON6411_001 Datasheet Page 2
AON6411_001 Datasheet Page 3
AON6411_001 Datasheet Page 4
AON6411_001 Datasheet Page 5
AON6411_001 Datasheet Page 6
AON6411_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

47A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

10290pF @ 10V

FET Feature

-

Power Dissipation (Max)

7.3W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

AON6411

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

47A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

10290pF @ 10V

FET Feature

-

Power Dissipation (Max)

7.3W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads