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AOT3N100 Datasheet

AOT3N100 Datasheet
Total Pages: 6
Size: 383.32 KB
Alpha & Omega Semiconductor
This datasheet covers 1 part numbers: AOT3N100
AOT3N100 Datasheet Page 1
AOT3N100 Datasheet Page 2
AOT3N100 Datasheet Page 3
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AOT3N100 Datasheet Page 6
AOT3N100

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 25V

FET Feature

-

Power Dissipation (Max)

132W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3