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AOW29S50 Datasheet

AOW29S50 Datasheet
Total Pages: 6
Size: 251.02 KB
Alpha & Omega Semiconductor
This datasheet covers 1 part numbers: AOW29S50
AOW29S50 Datasheet Page 1
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AOW29S50 Datasheet Page 6
AOW29S50

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1312pF @ 100V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA