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APT6M100K Datasheet

APT6M100K Datasheet
Total Pages: 4
Size: 115.35 KB
Microsemi
This datasheet covers 1 part numbers: APT6M100K
APT6M100K Datasheet Page 1
APT6M100K Datasheet Page 2
APT6M100K Datasheet Page 3
APT6M100K Datasheet Page 4
APT6M100K

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1410pF @ 25V

FET Feature

-

Power Dissipation (Max)

225W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 [K]

Package / Case

TO-220-3