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APTM100A23SCTG Datasheet

APTM100A23SCTG Datasheet
Total Pages: 7
Size: 295.3 KB
Microsemi
This datasheet covers 1 part numbers: APTM100A23SCTG
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APTM100A23SCTG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C

36A

Rds On (Max) @ Id, Vgs

270mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

308nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

8700pF @ 25V

Power - Max

694W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP4

Supplier Device Package

SP4