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APTM100DA18T1G Datasheet

APTM100DA18T1G Datasheet
Total Pages: 5
Size: 145.13 KB
Microsemi
This datasheet covers 1 part numbers: APTM100DA18T1G
APTM100DA18T1G Datasheet Page 1
APTM100DA18T1G Datasheet Page 2
APTM100DA18T1G Datasheet Page 3
APTM100DA18T1G Datasheet Page 4
APTM100DA18T1G Datasheet Page 5
APTM100DA18T1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

216mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

570nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

14800pF @ 25V

FET Feature

-

Power Dissipation (Max)

657W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP1

Package / Case

SP1