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APTM10DHM09TG Datasheet

APTM10DHM09TG Datasheet
Total Pages: 6
Size: 280.43 KB
Microsemi
This datasheet covers 1 part numbers: APTM10DHM09TG
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APTM10DHM09TG Datasheet Page 2
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APTM10DHM09TG Datasheet Page 6
APTM10DHM09TG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

139A

Rds On (Max) @ Id, Vgs

10mOhm @ 69.5A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

350nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

9875pF @ 25V

Power - Max

390W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP4

Supplier Device Package

SP4