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APTM50SKM35TG Datasheet

APTM50SKM35TG Datasheet
Total Pages: 6
Size: 285.53 KB
Microsemi
This datasheet covers 1 part numbers: APTM50SKM35TG
APTM50SKM35TG Datasheet Page 1
APTM50SKM35TG Datasheet Page 2
APTM50SKM35TG Datasheet Page 3
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APTM50SKM35TG Datasheet Page 6
APTM50SKM35TG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

99A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

39mOhm @ 49.5A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

14000pF @ 25V

FET Feature

-

Power Dissipation (Max)

781W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP4

Package / Case

SP4