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AUIRFP2907 Datasheet

AUIRFP2907 Datasheet
Total Pages: 12
Size: 221.98 KB
Infineon Technologies
This datasheet covers 1 part numbers: AUIRFP2907
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AUIRFP2907

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 125A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

620nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 25V

FET Feature

-

Power Dissipation (Max)

470W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3