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BAS385-TR3 Datasheet

BAS385-TR3 Datasheet
Total Pages: 4
Size: 84.67 KB
Vishay Semiconductor Diodes Division
This datasheet covers 2 part numbers: BAS385-TR3, BAS385-TR
BAS385-TR3 Datasheet Page 1
BAS385-TR3 Datasheet Page 2
BAS385-TR3 Datasheet Page 3
BAS385-TR3 Datasheet Page 4
BAS385-TR3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io)

200mA

Voltage - Forward (Vf) (Max) @ If

800mV @ 100mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2.3µA @ 25V

Capacitance @ Vr, F

10pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

2-SMD, No Lead

Supplier Device Package

MicroMELF

Operating Temperature - Junction

125°C (Max)

BAS385-TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io)

200mA

Voltage - Forward (Vf) (Max) @ If

800mV @ 100mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2.3µA @ 25V

Capacitance @ Vr, F

10pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

2-SMD, No Lead

Supplier Device Package

MicroMELF

Operating Temperature - Junction

125°C (Max)