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BAS386-TR Datasheet

BAS386-TR Datasheet
Total Pages: 4
Size: 86.36 KB
Vishay Semiconductor Diodes Division
This datasheet covers 2 part numbers: BAS386-TR, BAS386-TR3
BAS386-TR Datasheet Page 1
BAS386-TR Datasheet Page 2
BAS386-TR Datasheet Page 3
BAS386-TR Datasheet Page 4
BAS386-TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

200mA

Voltage - Forward (Vf) (Max) @ If

900mV @ 100mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5µA @ 40V

Capacitance @ Vr, F

880pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

2-SMD, No Lead

Supplier Device Package

MicroMELF

Operating Temperature - Junction

125°C (Max)

BAS386-TR3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

200mA

Voltage - Forward (Vf) (Max) @ If

900mV @ 100mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5µA @ 40V

Capacitance @ Vr, F

8pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

2-SMD, No Lead

Supplier Device Package

MicroMELF

Operating Temperature - Junction

-65°C ~ 150°C