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BC213L_J35Z Datasheet

BC213L_J35Z Datasheet
Total Pages: 4
Size: 52.42 KB
ON Semiconductor
This datasheet covers 3 part numbers: BC213L_J35Z, BC213L_D27Z, BC213L
BC213L_J35Z Datasheet Page 1
BC213L_J35Z Datasheet Page 2
BC213L_J35Z Datasheet Page 3
BC213L_J35Z Datasheet Page 4
BC213L_J35Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC213L_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC213L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3