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BC337-25RLRAG Datasheet

BC337-25RLRAG Datasheet
Total Pages: 7
Size: 173.75 KB
ON Semiconductor
BC337-25RLRAG Datasheet Page 1
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BC337-25RLRAG Datasheet Page 7
BC337-25RLRAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92 (TO-226)

BC337RL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC337-40ZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

250 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC337-25ZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC337-40RL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

250 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC337-25RL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC337-040G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

250 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC337-025G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC337G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 1V

Power - Max

625mW

Frequency - Transition

210MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3