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BC517_J35Z Datasheet

BC517_J35Z Datasheet
Total Pages: 3
Size: 27.41 KB
ON Semiconductor
This datasheet covers 6 part numbers: BC517_J35Z, BC517_D26Z, BC517_L34Z, BC517_D75Z, BC517_D27Z, BC517-D74Z
BC517_J35Z Datasheet Page 1
BC517_J35Z Datasheet Page 2
BC517_J35Z Datasheet Page 3
BC517_J35Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

30000 @ 20mA, 2V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC517_D26Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

30000 @ 20mA, 2V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC517_L34Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

30000 @ 20mA, 2V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC517_D75Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

30000 @ 20mA, 2V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC517_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

30000 @ 20mA, 2V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC517-D74Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

30000 @ 20mA, 2V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3