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BC548BZL1G Datasheet

BC548BZL1G Datasheet
Total Pages: 8
Size: 177.73 KB
ON Semiconductor
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BC548BZL1G Datasheet Page 8
BC548BZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC547CZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC547BZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC547BRL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC546BZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

65V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC548BRL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC546BRL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

65V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC548CZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC548CG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC548BG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC547CG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC547AZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

15nA

DC Current Gain (hFE) (Min) @ Ic, Vce

110 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3