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BC557BZL1G Datasheet

BC557BZL1G Datasheet
Total Pages: 7
Size: 81.64 KB
ON Semiconductor
BC557BZL1G Datasheet Page 1
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BC557BZL1G Datasheet Page 7
BC557BZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

320MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC557BRL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

320MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC557CZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

320MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC558BZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

360MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC558BRLG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

360MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC558BRL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

360MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC557CG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

320MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC557BG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

320MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC557AZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

320MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC556BZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

65V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

280MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC556BG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

65V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

280MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3