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BCR08PNE6327BTSA1 Datasheet

BCR08PNE6327BTSA1 Datasheet
Total Pages: 7
Size: 527.78 KB
Infineon Technologies
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BCR08PNE6327BTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

170MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR08PNE6433HTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

170MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR08PNB6327XT

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

170MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR08PNH6727XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

170MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR08PNH6433XTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

170MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR08PNH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

170MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6