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BCR119SE6433HTMA1 Datasheet

BCR119SE6433HTMA1 Datasheet
Total Pages: 12
Size: 253.03 KB
Infineon Technologies
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BCR119SE6433HTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR119SE6327BTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR119SH6433XTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR119SH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR119WE6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR 119F E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

PG-TSFP-3

BCR 119 E6433

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

BCR119WH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR119E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3