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BD239TU Datasheet

BD239TU Datasheet
Total Pages: 5
Size: 146.95 KB
ON Semiconductor
This datasheet covers 5 part numbers: BD239TU, BD239BTU, BD239ATU, BD239C, BD239CTU
BD239TU Datasheet Page 1
BD239TU Datasheet Page 2
BD239TU Datasheet Page 3
BD239TU Datasheet Page 4
BD239TU Datasheet Page 5
BD239TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

700mV @ 200mA, 1A

Current - Collector Cutoff (Max)

300µA

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 1A, 4V

Power - Max

30W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD239BTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

700mV @ 200mA, 1A

Current - Collector Cutoff (Max)

300µA

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 1A, 4V

Power - Max

30W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD239ATU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

700mV @ 200mA, 1A

Current - Collector Cutoff (Max)

300µA

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 1A, 4V

Power - Max

30W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD239C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

700mV @ 200mA, 1A

Current - Collector Cutoff (Max)

300µA

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 1A, 4V

Power - Max

30W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD239CTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

700mV @ 200mA, 1A

Current - Collector Cutoff (Max)

300µA

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 1A, 4V

Power - Max

30W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3