BD810 Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A Current - Collector Cutoff (Max) 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V Power - Max 90W Frequency - Transition 1.5MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A Current - Collector Cutoff (Max) 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V Power - Max 90W Frequency - Transition 1.5MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A Current - Collector Cutoff (Max) 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V Power - Max 90W Frequency - Transition 1.5MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
