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BFL4001-1EX Datasheet

BFL4001-1EX Datasheet
Total Pages: 7
Size: 250.93 KB
ON Semiconductor
This datasheet covers 2 part numbers: BFL4001-1EX, BFL4001-1E
BFL4001-1EX Datasheet Page 1
BFL4001-1EX Datasheet Page 2
BFL4001-1EX Datasheet Page 3
BFL4001-1EX Datasheet Page 4
BFL4001-1EX Datasheet Page 5
BFL4001-1EX Datasheet Page 6
BFL4001-1EX Datasheet Page 7
BFL4001-1EX

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 37W (Tc)

Operating Temperature

150°C (TA)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3 Fullpack/TO-220F-3SG

Package / Case

TO-220-3 Full Pack

BFL4001-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3 Fullpack/TO-220F-3SG

Package / Case

TO-220-3 Full Pack