BSC200P03LSGAUMA1 Datasheet
BSC200P03LSGAUMA1 Datasheet
Total Pages: 9
Size: 494.97 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
BSC200P03LSGAUMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 2.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 48.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2430pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 63W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |
