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BSH202 Datasheet

BSH202 Datasheet
Total Pages: 8
Size: 225.11 KB
Nexperia
This datasheet covers 1 part numbers: BSH202,215
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BSH202,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

520mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

900mOhm @ 280mA, 10V

Vgs(th) (Max) @ Id

1.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 24V

FET Feature

-

Power Dissipation (Max)

417mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3