BSM120D12P2C005 Datasheet
BSM120D12P2C005 Datasheet
Total Pages: 9
Size: 633.26 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
BSM120D12P2C005
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Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 120A (Tc) Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 2.7V @ 22mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V Power - Max 780W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type - Package / Case Module Supplier Device Package Module |
