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BSM300D12P2E001 Datasheet

BSM300D12P2E001 Datasheet
Total Pages: 10
Size: 1,679.47 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: BSM300D12P2E001
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BSM300D12P2E001

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

300A (Tc)

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

4V @ 68mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

35000pF @ 10V

Power - Max

1875W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

Module